TP65H070LDG

Transphorm

GANFET N-CH 650V 25A 3PQFN

Description
GaNFET (Cascode Gallium Nitride FET) 650 V 25A (Tc) 10V 85mOhm @ 16A, 10V 4.8V @ 700µA 9.3 nC @ 10 V ±20V 600 pF @ 400 V - 96W (Tc) -55°C ~ 150°C (TJ) Surface Mount 3-PQFN (8x8) 3-PowerDFN

RoHS Compliant

TP65H070LDG Datasheet

In Stock: 825

Can ship immediately

QTY UNIT PRICE
1:$12.98000

Product Specifications

TypeDescription
Series:TP65H070L
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:GaNFET (Cascode Gallium Nitride FET)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:25A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:85mOhm @ 16A, 10V
Vgs(th) (Max) @ Id:4.8V @ 700µA
Gate Charge (Qg) (Max) @ Vgs:9.3 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:600 pF @ 400 V
FET Feature:-
Power Dissipation (Max):96W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:3-PQFN (8x8)
Package / Case:3-PowerDFN

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