SCT3022KLHRC11

ROHM Semiconductor

SICFET N-CH 1200V 95A TO247N

Description
SiCFET (Silicon Carbide) 1200 V 95A (Tc) 18V 28.6mOhm @ 36A, 18V 5.6V @ 18.2mA 178 nC @ 18 V +22V, -4V 2879 pF @ 800 V - 427W 175°C (TJ) Through Hole TO-247N TO-247-3

RoHS Compliant

SCT3022KLHRC11 Datasheet

In Stock: 857

Can ship immediately

QTY UNIT PRICE
1:$121.25000
10:$114.99499
25:$111.86594

Product Specifications

TypeDescription
Series:Automotive, AEC-Q101
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):1200 V
Current - Continuous Drain (Id) @ 25°C:95A (Tc)
Drive Voltage (Max Rds On, Min Rds On):18V
Rds On (Max) @ Id, Vgs:28.6mOhm @ 36A, 18V
Vgs(th) (Max) @ Id:5.6V @ 18.2mA
Gate Charge (Qg) (Max) @ Vgs:178 nC @ 18 V
Vgs (Max):+22V, -4V
Input Capacitance (Ciss) (Max) @ Vds:2879 pF @ 800 V
FET Feature:-
Power Dissipation (Max):427W
Operating Temperature:175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247N
Package / Case:TO-247-3

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