PMFPB8040XP,115

Rochester Electronics

MOSFET P-CH 20V 2.7A HUSON6

Description
MOSFET (Metal Oxide) 20 V 2.7A (Ta) 1.8V, 4.5V 102mOhm @ 2.7A, 4.5V 1V @ 250µA 8.6 nC @ 4.5 V ±12V 550 pF @ 10 V Schottky Diode (Isolated) 485mW (Ta), 6.25W (Tc) -55°C ~ 150°C (TJ) Surface Mount 6-HUSON-EP (2x2) 6-UDFN Exposed Pad

RoHS Compliant

PMFPB8040XP,115 Datasheet

In Stock: 161,717

Can ship immediately

QTY UNIT PRICE
1:$0.18000

Product Specifications

TypeDescription
Series:-
Package:Bulk
Part Status:Obsolete
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:2.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:102mOhm @ 2.7A, 4.5V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:8.6 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:550 pF @ 10 V
FET Feature:Schottky Diode (Isolated)
Power Dissipation (Max):485mW (Ta), 6.25W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:6-HUSON-EP (2x2)
Package / Case:6-UDFN Exposed Pad

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