NTD23N03R-001

Rochester Electronics

MOSFET N-CH 25V 3.8A IPAK

Description
MOSFET (Metal Oxide) 25 V 3.8A (Ta), 17.1A (Tc) 4V, 5V 45mOhm @ 6A, 10V 2V @ 250µA 3.76 nC @ 4.5 V ±20V 225 pF @ 20 V - 1.14W (Ta), 22.3W (Tc) -55°C ~ 150°C (TJ) Through Hole I-PAK TO-251-3 Short Leads, IPak, TO-251AA

RoHS Compliant

NTD23N03R-001 Datasheet

In Stock: 3,482

Can ship immediately

QTY UNIT PRICE
1:$0.10000

Product Specifications

TypeDescription
Series:-
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):25 V
Current - Continuous Drain (Id) @ 25°C:3.8A (Ta), 17.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4V, 5V
Rds On (Max) @ Id, Vgs:45mOhm @ 6A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:3.76 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:225 pF @ 20 V
FET Feature:-
Power Dissipation (Max):1.14W (Ta), 22.3W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:I-PAK
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA

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