RQ3E180BNTB

ROHM Semiconductor

MOSFET N-CHANNEL 30V 39A 8HSMT

Description
MOSFET (Metal Oxide) 30 V 39A (Tc) 4.5V, 10V 3.9mOhm @ 18A, 10V 2.5V @ 1mA 37 nC @ 4.5 V ±20V 3500 pF @ 15 V - 2W (Ta), 20W (Tc) -55°C ~ 150°C (TJ) Surface Mount 8-HSMT (3.2x3) 8-PowerVDFN

RoHS Compliant

RQ3E180BNTB Datasheet

In Stock: 340

Can ship immediately

QTY UNIT PRICE
1:$0.61000
3000:$0.20540
6000:$0.19215

Product Specifications

TypeDescription
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:39A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:3.9mOhm @ 18A, 10V
Vgs(th) (Max) @ Id:2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:37 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3500 pF @ 15 V
FET Feature:-
Power Dissipation (Max):2W (Ta), 20W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-HSMT (3.2x3)
Package / Case:8-PowerVDFN

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