SIHD2N80E-GE3

Vishay / Siliconix

MOSFET N-CH 800V 2.8A DPAK

Description
MOSFET (Metal Oxide) 800 V 2.8A (Tc) 10V 2.75Ohm @ 1A, 10V 4V @ 250µA 19.6 nC @ 10 V ±30V 315 pF @ 100 V - 62.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount D-PAK (TO-252AA) TO-252-3, DPak (2 Leads + Tab), SC-63

RoHS Compliant

SIHD2N80E-GE3 Datasheet

In Stock: 220

Can ship immediately

QTY UNIT PRICE
1:$1.49000

Product Specifications

TypeDescription
Series:E
Package:Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:2.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2.75Ohm @ 1A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:19.6 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:315 pF @ 100 V
FET Feature:-
Power Dissipation (Max):62.5W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D-PAK (TO-252AA)
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63

You May Interested

IRF1010ZPBF
IRF1010ZPBF
MOSFET N-CH 55V 75A TO220AB
IPB080N03LGATMA1
IPB080N03LGATMA1
PFET, 48A I(D), 30V, 0.0119OHM,
SCT3105KRC14
SCT3105KRC14
SICFET N-CH 1200V 24A TO247-4L
2SK2054-D-T2-AZ
2SK2054-D-T2-AZ
N-CHANNEL MOSFET
FQD17P06TM
FQD17P06TM
MOSFET P-CH 60V 12A DPAK
IPW60R125P6XKSA1
IPW60R125P6XKSA1
MOSFET N-CH 600V 30A TO247-3
CSD16322Q5
CSD16322Q5
MOSFET N-CH 25V 21A/97A 8VSON
TP0620N3-G
TP0620N3-G
MOSFET P-CH 200V 175MA TO92-3
STD7NM60N
STD7NM60N
MOSFET N-CH 600V 5A DPAK
AOTS21311C
AOTS21311C
MOSFET P-CH 30V 5.9A 6TSOP
IPP042N03LG
IPP042N03LG
IPP042N03 - 12V-300V N-CHANNEL P
IPP030N10N3GXKSA1
IPP030N10N3GXKSA1
MOSFET N-CH 100V 100A TO220-3
Top