AON3414

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 30V 10.5A 8DFN

Description
MOSFET (Metal Oxide) 30 V 10.5A (Ta) 4.5V, 10V 17mOhm @ 9A, 10V 2.4V @ 250µA 25 nC @ 10 V ±20V 690 pF @ 15 V - 3.1W (Ta) -55°C ~ 150°C (TJ) Surface Mount 8-DFN (2.9x2.3) 8-SMD, Flat Lead

RoHS Compliant

AON3414 Datasheet

In Stock: 956

Can ship immediately

QTY UNIT PRICE
1:$0.47000
3000:$0.14335
6000:$0.13581

Product Specifications

TypeDescription
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:10.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:17mOhm @ 9A, 10V
Vgs(th) (Max) @ Id:2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:25 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:690 pF @ 15 V
FET Feature:-
Power Dissipation (Max):3.1W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-DFN (2.9x2.3)
Package / Case:8-SMD, Flat Lead

You May Interested

TP0606N3-G
TP0606N3-G
MOSFET P-CH 60V 320MA TO92-3
NTR4501NT3H
NTR4501NT3H
NFET SOT23 20V 3.2A 70R T
UPA2726UT1A-E1-AY
UPA2726UT1A-E1-AY
MOSFET N-CH 30V 20A 8DFN
SQS407ENW-T1_GE3
SQS407ENW-T1_GE3
MOSFET P-CH 30V 16A PPAK1212-8W
SIHB15N60E-GE3
SIHB15N60E-GE3
MOSFET N-CH 600V 15A D2PAK
2SK4066-DL-E
2SK4066-DL-E
MOSFET N-CH 60V 100A SMP-FD
NVMFS5113PLT1G
NVMFS5113PLT1G
MOSFET P-CH 60V 10A/64A 5DFN
STB34NM60ND
STB34NM60ND
MOSFET N-CH 600V 29A D2PAK
IAUC100N08S5N043ATMA1
IAUC100N08S5N043ATMA1
MOSFET N-CH 80V 100A 8TDSON-34
FDU6682
FDU6682
N-CHANNEL POWER MOSFET
SI7113ADN-T1-GE3
SI7113ADN-T1-GE3
MOSFET P-CH 100V 10.8A PPAK
NX3008PBKMB,315
NX3008PBKMB,315
MOSFET P-CH 30V 300MA DFN1006B-3
Top