IRF350

NTE Electronics, Inc.

MOSFET N-CH 400V 14A TO3

Description
MOSFET (Metal Oxide) 400 V 14A (Tc) 10V 400mOhm @ 14A, 10V 4V @ 250µA 110 nC @ 10 V ±20V 2600 pF @ 25 V - 150W (Tc) -55°C ~ 150°C (TJ) Through Hole TO-3 TO-204AA, TO-3

RoHS Compliant

IRF350 Datasheet

In Stock: 296

Can ship immediately

QTY UNIT PRICE
1:$23.19000

Product Specifications

TypeDescription
Series:-
Package:Bag
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):400 V
Current - Continuous Drain (Id) @ 25°C:14A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:400mOhm @ 14A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:110 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2600 pF @ 25 V
FET Feature:-
Power Dissipation (Max):150W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-3
Package / Case:TO-204AA, TO-3

You May Interested

IPD80R1K2P7ATMA1
IPD80R1K2P7ATMA1
MOSFET N-CH 800V 4.5A TO252-3
IRFF9231
IRFF9231
MOSFET N-CH 150V 4A TO205AF
FQPF6N40CF
FQPF6N40CF
MOSFET N-CH 400V 6A TO220F
NVMFS5833NWFT1G
NVMFS5833NWFT1G
N-CHANNEL, MOSFET
FDMC8588DC
FDMC8588DC
POWER FIELD-EFFECT TRANSISTOR, 1
BSB013NE2LXIXUMA1
BSB013NE2LXIXUMA1
MOSFET N-CH 25V 36A/163A 2WDSON
FQA9N90C-F109
FQA9N90C-F109
MOSFET N-CH 900V 9A TO3P
IPP076N12N3GXKSA1
IPP076N12N3GXKSA1
MOSFET N-CH 120V 100A TO220-3
NTMFS5C677NLT1G
NTMFS5C677NLT1G
MOSFET N-CH 60V 11A/36A 5DFN
IXTY1R6N50D2-TRL
IXTY1R6N50D2-TRL
MOSFET N-CH 500V 1.6A TO252AA
IRF8010PBF
IRF8010PBF
MOSFET N-CH 100V 80A TO220AB
FDMS3624S
FDMS3624S
SMALL SIGNAL FIELD-EFFECT TRANSI
Top