TSM13ND50CI

TSC (Taiwan Semiconductor)

MOSFET N-CH 500V 13A ITO220

Description
MOSFET (Metal Oxide) 500 V 13A (Tc) 10V 480mOhm @ 3.3A, 10V 3.8V @ 250µA 39 nC @ 10 V ±30V 1877 pF @ 50 V - 57W (Tc) -55°C ~ 150°C (TJ) Through Hole ITO-220 TO-220-3 Full Pack, Isolated Tab

RoHS Compliant

TSM13ND50CI Datasheet

In Stock: 4,128

Can ship immediately

QTY UNIT PRICE
1:$1.84000
50:$1.48350
100:$1.33515

Product Specifications

TypeDescription
Series:-
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:13A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:480mOhm @ 3.3A, 10V
Vgs(th) (Max) @ Id:3.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:39 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1877 pF @ 50 V
FET Feature:-
Power Dissipation (Max):57W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:ITO-220
Package / Case:TO-220-3 Full Pack, Isolated Tab

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