TK33S10N1Z,LXHQ

Toshiba Electronic Devices and Storage Corporation

MOSFET N-CH 100V 33A DPAK

Description
MOSFET (Metal Oxide) 100 V 33A (Ta) 10V 9.7mOhm @ 16.5A, 10V 4V @ 500µA 28 nC @ 10 V ±20V 2050 pF @ 10 V - 125W (Tc) 175°C Surface Mount DPAK+ TO-252-3, DPak (2 Leads + Tab), SC-63

RoHS Compliant

TK33S10N1Z,LXHQ Datasheet

In Stock: 3,686

Can ship immediately

QTY UNIT PRICE
1:$1.49000

Product Specifications

TypeDescription
Series:U-MOSVIII-H
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:33A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:9.7mOhm @ 16.5A, 10V
Vgs(th) (Max) @ Id:4V @ 500µA
Gate Charge (Qg) (Max) @ Vgs:28 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2050 pF @ 10 V
FET Feature:-
Power Dissipation (Max):125W (Tc)
Operating Temperature:175°C
Mounting Type:Surface Mount
Supplier Device Package:DPAK+
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63

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