NTMS7N03R2G

Rochester Electronics

MOSFET N-CH 30V 4.8A 8SOIC

Description
MOSFET (Metal Oxide) 30 V 4.8A (Ta) 4.5V, 10V 23mOhm @ 7A, 10V 3V @ 250µA 43 nC @ 10 V ±20V 1.19 pF @ 25 V - 800mW (Ta) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC 8-SOIC (0.154", 3.90mm Width)

RoHS Compliant

NTMS7N03R2G Datasheet

In Stock: 2,183

Can ship immediately

QTY UNIT PRICE
1:$0.64000
2500:$0.33016
5000:$0.30740

Product Specifications

TypeDescription
Series:-
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:4.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:23mOhm @ 7A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:43 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1.19 pF @ 25 V
FET Feature:-
Power Dissipation (Max):800mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SOIC
Package / Case:8-SOIC (0.154", 3.90mm Width)

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