2SK2009TE85LF

Toshiba Electronic Devices and Storage Corporation

MOSFET N-CH 30V 200MA SC59-3

Description
MOSFET (Metal Oxide) 30 V 200mA (Ta) 2.5V 2Ohm @ 50MA, 2.5V 1.5V @ 100µA - ±20V 70 pF @ 3 V - 200mW (Ta) 150°C (TJ) Surface Mount SC-59-3 TO-236-3, SC-59, SOT-23-3

RoHS Compliant

2SK2009TE85LF Datasheet

In Stock: 2,267

Can ship immediately

QTY UNIT PRICE
1:$0.58000
3000:$0.19425
6000:$0.18172

Product Specifications

TypeDescription
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V
Rds On (Max) @ Id, Vgs:2Ohm @ 50MA, 2.5V
Vgs(th) (Max) @ Id:1.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:-
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:70 pF @ 3 V
FET Feature:-
Power Dissipation (Max):200mW (Ta)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SC-59-3
Package / Case:TO-236-3, SC-59, SOT-23-3

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