AONS1R6A70

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 700V 1.1A/4.6A 8DFN

Description
MOSFET (Metal Oxide) 700 V 1.1A (Ta), 4.6A (Tc) 10V 1.6Ohm @ 1A, 10V 3.5V @ 250µA 8 nC @ 10 V ±30V 354 pF @ 100 V - 4.1W (Ta), 78W (Tc) -55°C ~ 150°C (TJ) Surface Mount 8-DFN-EP (5x6) 8-PowerVDFN

RoHS Compliant

AONS1R6A70 Datasheet

In Stock: 3,117

Can ship immediately

QTY UNIT PRICE
1:$1.41000

Product Specifications

TypeDescription
Series:aMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):700 V
Current - Continuous Drain (Id) @ 25°C:1.1A (Ta), 4.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.6Ohm @ 1A, 10V
Vgs(th) (Max) @ Id:3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:8 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:354 pF @ 100 V
FET Feature:-
Power Dissipation (Max):4.1W (Ta), 78W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-DFN-EP (5x6)
Package / Case:8-PowerVDFN

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