NTD4808N-1G

Sanyo Semiconductor/ON Semiconductor

MOSFET N-CH 30V 10A/63A IPAK

Description
MOSFET (Metal Oxide) 30 V 10A (Ta), 63A (Tc) 4.5V, 11.5V 8mOhm @ 30A, 10V 2.5V @ 250µA 13 nC @ 4.5 V ±20V 1538 pF @ 12 V - 1.4W (Ta), 54.6W (Tc) -55°C ~ 175°C (TJ) Through Hole I-PAK TO-251-3 Short Leads, IPak, TO-251AA

RoHS Compliant

NTD4808N-1G Datasheet

In Stock: 45,281,774

Can ship immediately

QTY UNIT PRICE
1:$1.02000
75:$0.78855
150:$0.68686

Product Specifications

TypeDescription
Series:-
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:10A (Ta), 63A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 11.5V
Rds On (Max) @ Id, Vgs:8mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:13 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1538 pF @ 12 V
FET Feature:-
Power Dissipation (Max):1.4W (Ta), 54.6W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:I-PAK
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA

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