SI2367DS-T1-GE3

Vishay / Siliconix

MOSFET P-CH 20V 3.8A SOT23-3

Description
MOSFET (Metal Oxide) 20 V 3.8A (Tc) 1.8V, 4.5V 66mOhm @ 2.5A, 4.5V 1V @ 250µA 23 nC @ 8 V ±8V 561 pF @ 10 V - 960mW (Ta), 1.7W (Tc) -55°C ~ 150°C (TJ) Surface Mount SOT-23-3 (TO-236) TO-236-3, SC-59, SOT-23-3

RoHS Compliant

SI2367DS-T1-GE3 Datasheet

In Stock: 8,714

Can ship immediately

QTY UNIT PRICE
1:$0.43000
3000:$0.16632
6000:$0.15618

Product Specifications

TypeDescription
Series:TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:3.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:66mOhm @ 2.5A, 4.5V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:23 nC @ 8 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:561 pF @ 10 V
FET Feature:-
Power Dissipation (Max):960mW (Ta), 1.7W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3 (TO-236)
Package / Case:TO-236-3, SC-59, SOT-23-3

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