Toshiba Electronic Devices and Storage Corporation
MOSFET N-CH 650V 11.5A DPAK
RoHS Compliant
Can ship immediately
QTY | UNIT PRICE |
1: | $1.86000 |
2000: | $0.83503 |
Type | Description |
---|---|
Series: | DTMOSV |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 650 V |
Current - Continuous Drain (Id) @ 25°C: | 11.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 290mOhm @ 5.8A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 450µA |
Gate Charge (Qg) (Max) @ Vgs: | 25 nC @ 10 V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 730 pF @ 300 V |
FET Feature: | - |
Power Dissipation (Max): | 100W (Tc) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | DPAK |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |