NSV40300MDR2G

Rochester Electronics

LOW VCE(SAT) TRANSISTOR, DUAL PN

Description
3A 40V 170mV @ 200mA, 2A 100nA (ICBO) 180 @ 1A, 2V 653mW 100MHz -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SOIC

RoHS Compliant

NSV40300MDR2G Datasheet

In Stock: 2,667

Can ship immediately

QTY UNIT PRICE
1:$0.31000
2500:$0.31000

Product Specifications

TypeDescription
Series:-
Package:Bulk
Part Status:Active
Transistor Type:2 PNP (Dual)
Current - Collector (Ic) (Max):3A
Voltage - Collector Emitter Breakdown (Max):40V
Vce Saturation (Max) @ Ib, Ic:170mV @ 200mA, 2A
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:180 @ 1A, 2V
Power - Max:653mW
Frequency - Transition:100MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:8-SOIC

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