MJ11012G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN DARL 60V 30A TO204

Description
30 A 60 V 4V @ 300mA, 30A 1mA 1000 @ 20A, 5V 200 W 4MHz -55°C ~ 200°C (TJ) Through Hole TO-204AA, TO-3 TO-204 (TO-3)

RoHS Compliant

MJ11012G Datasheet

In Stock: 75,321

Can ship immediately

QTY UNIT PRICE
1:$7.35000
10:$6.63721
100:$5.49463

Product Specifications

TypeDescription
Series:-
Package:Tray
Part Status:Active
Transistor Type:NPN - Darlington
Current - Collector (Ic) (Max):30 A
Voltage - Collector Emitter Breakdown (Max):60 V
Vce Saturation (Max) @ Ib, Ic:4V @ 300mA, 30A
Current - Collector Cutoff (Max):1mA
DC Current Gain (hFE) (Min) @ Ic, Vce:1000 @ 20A, 5V
Power - Max:200 W
Frequency - Transition:4MHz
Operating Temperature:-55°C ~ 200°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-204AA, TO-3
Supplier Device Package:TO-204 (TO-3)

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